Intrinsic quantum dots in partially ordered bulk (GaIn)P

被引:19
作者
Kops, U
Blome, PG
Wenderoth, M
Ulbrich, RG
Geng, C
Scholz, F
机构
[1] Univ Gottingen, Inst Phys 4, D-37073 Gottingen, Germany
[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 03期
关键词
D O I
10.1103/PhysRevB.61.1992
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a photoluminescence study with 500 nm lateral resolution on partially ordered bulk (GaIn)P alloys at lattice temperatures 3-60 K, external magnetic fields 0-12 T, and excitation power 0.1-100 mu W. In the known ordering-induced low energy emission band we resolve narrow optical transition lines with 0.3-1.0 meV width. They show no thermal broadening, a diamagnetic shift with pronounced anisotropy, and biexci-tonic states. We demonstrate that the transitions are connected with intrinsic quasi-zero-dimensional electron-hole confinement formed at the antiphase-boundaries in the crystal.
引用
收藏
页码:1992 / 1998
页数:7
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