Design and fabrication of a single-ended gate mixer for a down-converter in wireless applications

被引:1
|
作者
Yang, DY [1 ]
Chung, YC [1 ]
机构
[1] Cheju Natl Univ, Jeju, South Korea
关键词
GaAs MESFET; mixer; MESFET mixer;
D O I
10.1002/mop.10553
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A single-ended gate mixer with a high conversion gain, low dissipated power, wide dynamic range and good isolation factor is designed and tested. The mixer is composed of a hairpin-line band-pass filter, an input/output matching circuit, a GaAs MESFET transistor, and a lumped element low-pass filter to convert the radio frequency (RF) into an intermediate frequency (IF). In the non-linearity analysis of a GaAs MESFET, the novel method with a harmonic balance technique is used to analyze the operating characteristics of a mixer circuit. The designed mixer outperforms a general mixer for a down converter in wireless applications. (C) 2002 Wiley Periodicals, Inc.
引用
收藏
页码:189 / 193
页数:5
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