Temperature stability of permittivity and dielectric relaxation in multilayered thin films of (Ba0.80Sr0.20)(Ti1-xZrx)O3 with a compositionally graded layer

被引:23
|
作者
Cheng, BL
Wang, C
Wang, SY
Button, TW
Lu, HB
Zhou, YL
Chen, ZH
Yang, GZ
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ Birmingham, IRC Mat Proc, Birmingham B15 2TT, W Midlands, England
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
D O I
10.1063/1.1767605
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mutilayered thin (Ba0.80Sr0.20)(Ti1-xZrx)O-3 (BSTZ) films with various compositional graded layers (CGL) have been successfully fabricated on Nb doped SrTiO3 substrates by pulsed-laser deposition technique with four BSTZ ceramic targets (x=0.36,0.18,0.08,0). The gradients of compositions are artificially tailored in multilayered thin films by varying the CGL, and x-ray diffraction indicates that the internal stress is modulated in the multilayered films. Influence of the composition gradient on the dielectric properties has been investigated at the temperature range from 120 to 440 K. Temperature stability of permittivity of the multilayered films is found to be improved with the increase of the gradients of compositions. Moreover, a dielectric relaxation process with activation energy of 1.02 eV is observed, which is also related to the composition gradient, and can be described to motion of oxygen vacancies. The results show that the temperature stability of permittivity can be tailed by the design of multilayered film with CGL, and the internal stress induced by the gradients of composition could influence the relaxation process. (C) 2004 American Institute of Physics.
引用
收藏
页码:5431 / 5433
页数:3
相关论文
共 50 条
  • [21] INFLUENCE OF CUO ON THE STRUCTURE AND DIELECTRIC-PROPERTIES OF THE BA(TI1-XZRX)O3 SYSTEM
    WU, L
    YANG, CF
    WU, TS
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (17) : 1177 - 1179
  • [22] THE CURIE-POINT TEMPERATURE OF BA(TI1-XZRX)O3 SOLID-SOLUTIONS
    NEIRMAN, SM
    JOURNAL OF MATERIALS SCIENCE, 1988, 23 (11) : 3973 - 3980
  • [23] Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films
    Gariglio, S.
    Stucki, N.
    Triscone, J.-M.
    Triscone, G.
    APPLIED PHYSICS LETTERS, 2007, 90 (20)
  • [24] Quasi-ferroelectric state in Ba(Ti1-xZrx)O3 relaxor:: dielectric spectroscopy evidence
    Bokov, A. A.
    Maglione, M.
    Ye, Z-G
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (09)
  • [25] The tunability and dielectric properties of the compositionally graded Ba(ZrxTi1−x)O3 thin films
    Jiwei Zhai
    Cheng Gao
    Xi Yao
    Zhengkui Xu
    Haydn Chen
    Journal of Electroceramics, 2008, 21 : 12 - 16
  • [26] The tunability and dielectric properties of the compositionally graded Ba(ZrxTi1-x)O3 thin films
    Zhai, Jiwei
    Gao, Cheng
    Yao, Xi
    Xu, Zhengkui
    Chen, Haydn
    JOURNAL OF ELECTROCERAMICS, 2008, 21 (1-4) : 12 - 16
  • [27] Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O3 thin films grown by the soft chemical method
    Souza, I. A.
    Simoes, A. Z.
    Cava, S.
    Cavalcante, L. S.
    Cilense, M.
    Longo, E.
    Varela, J. A.
    JOURNAL OF SOLID STATE CHEMISTRY, 2006, 179 (10) : 2972 - 2976
  • [28] Effects of CeO2 buffer layer thickness on the orientation and dielectric proper-ties of Ba(Zr0.20Ti0.80)O3 thin films
    Gao, Lina
    Zhai, Jiwei
    Song, Sangnian
    Hao, Xihong
    Yao, Xi
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (02) : 299 - 303
  • [29] Microstructure and electrical properties of Ba0.7Sr0.3(Ti1-xZrx)O3 thin films prepared on copper foils with sol-gel method
    Fan, Yanhua
    Yu, Shuhui
    Sun, Rong
    Li, Lei
    Yin, Yansheng
    Du, Ruxu
    THIN SOLID FILMS, 2010, 518 (14) : 3610 - 3614
  • [30] The zirconium doped (Ba0.65Sr0.35)(Ti1-xZrx)O3 thin films for gbit-scale dynamic random access memory device applications
    Kim, JS
    Yoon, SG
    INTEGRATED FERROELECTRICS, 1999, 24 (1-4) : 65 - 74