Temperature stability of permittivity and dielectric relaxation in multilayered thin films of (Ba0.80Sr0.20)(Ti1-xZrx)O3 with a compositionally graded layer

被引:23
|
作者
Cheng, BL
Wang, C
Wang, SY
Button, TW
Lu, HB
Zhou, YL
Chen, ZH
Yang, GZ
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ Birmingham, IRC Mat Proc, Birmingham B15 2TT, W Midlands, England
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
D O I
10.1063/1.1767605
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mutilayered thin (Ba0.80Sr0.20)(Ti1-xZrx)O-3 (BSTZ) films with various compositional graded layers (CGL) have been successfully fabricated on Nb doped SrTiO3 substrates by pulsed-laser deposition technique with four BSTZ ceramic targets (x=0.36,0.18,0.08,0). The gradients of compositions are artificially tailored in multilayered thin films by varying the CGL, and x-ray diffraction indicates that the internal stress is modulated in the multilayered films. Influence of the composition gradient on the dielectric properties has been investigated at the temperature range from 120 to 440 K. Temperature stability of permittivity of the multilayered films is found to be improved with the increase of the gradients of compositions. Moreover, a dielectric relaxation process with activation energy of 1.02 eV is observed, which is also related to the composition gradient, and can be described to motion of oxygen vacancies. The results show that the temperature stability of permittivity can be tailed by the design of multilayered film with CGL, and the internal stress induced by the gradients of composition could influence the relaxation process. (C) 2004 American Institute of Physics.
引用
收藏
页码:5431 / 5433
页数:3
相关论文
共 50 条
  • [1] Improved dielectric properties and tunability of multilayered thin films of (Ba0.80Sr0.20)(Ti1-xZrx)O3 with compositionally graded layer
    Wang, C
    Cheng, BL
    Wang, SY
    Lu, HB
    Zhou, YL
    Chen, ZH
    Yang, GZ
    APPLIED PHYSICS LETTERS, 2004, 84 (05) : 765 - 767
  • [2] Revisiting the temperature-dependent dielectric permittivity of Ba(Ti1-xZrx)O3
    Liu, Laijun
    Ren, Shaokai
    Zhang, Jie
    Peng, Biaolin
    Fang, Liang
    Wang, Dawei
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2018, 101 (06) : 2408 - 2416
  • [3] Raman spectra study on multilayered compositional graded (Ba0.8Sr0.2)(Ti1-xZrx)O3 thin films
    Wang, C
    Cheng, BL
    Wang, SY
    Dai, SY
    Chen, ZH
    HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2, 2005, 280-283 : 1909 - 1912
  • [4] Electromechanical properties of Ba(Ti1-xZrx)O3 thin films
    S. Halder
    P. Gerber
    T. Schneller
    R. Waser
    Applied Physics A, 2005, 81 : 11 - 13
  • [5] Electromechanical properties of Ba(Ti1-xZrx)O3 thin films
    Halder, S
    Gerber, P
    Schneller, T
    Waser, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (01): : 11 - 13
  • [6] DIELECTRIC AND MICROSTRUCTURAL PROPERTIES OF Ba(Ti1-XZrX)O3 THIN FILMS ON COPPER SUBSTRATES
    Ihlefeld, J. F.
    Maria, J-P.
    Borland, W.
    ADVANCES IN ELECTRONIC CERAMIC MATERIALS, 2005, 26 (05): : 109 - 116
  • [7] Dielectric behavior of Ba(Ti1-xZrx)O3 single crystals
    Yu, Zhi
    Guo, Ruyan
    Bhalla, A.S.
    1600, American Inst of Physics, Woodbury, NY, USA (88):
  • [8] Dielectric behavior of Ba(Ti1-xZrx)O3 solid solution
    Bokov, A. A.
    Maglione, M.
    Simon, A.
    Ye, Z-G.
    FERROELECTRICS, 2006, 337 : 1341 - 1350
  • [9] Dielectric properties of Ba(Ti1-xZrx)O3 solid solutions
    Yu, Zhi
    Ang, Chen
    Guo, Ruyan
    Bhalla, A. S.
    MATERIALS LETTERS, 2007, 61 (02) : 326 - 329
  • [10] Dielectric behavior of Ba(Ti1-xZrx)O3 single crystals
    Yu, Z
    Guo, RY
    Bhalla, AS
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) : 410 - 415