Growth of highly oriented zinc oxide thin films by plasma enhanced chemical vapor deposition

被引：1

作者：

Kim, Hee Joon ^{[1
]}

Jang, Dong Young

Shishodia, Prem Kumar

Yoshida, Akira

机构：

[1] Toyohashi Univ Technol, Dept Ecol Engn, Toyohashi, Aichi 4418580, Japan

[2] Univ Delhi, Zakir Husain Coll, Dept Phys & Elect, New Delhi 110002, India

[3] Seoul Natl Univ Technol, Grad Sch Energy & Environm, Seoul 139743, South Korea

来源：

ADVANCED NONDESTRUCTIVE EVALUATION I, PTS 1 AND 2, PROCEEDINGS | 2006年 / 321-323卷

关键词：

highly oriented zinc oxide; ZnO; thin film; plasma enhanced chemical vapor deposition (PECVD); diethylzinc (DEZ);

D O I：

10.4028/www.scientific.net/KEM.321-323.1687

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO filins are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 degrees C with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

引用

页码：1687 / 1690

页数：4

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