Energy Band Profile Optimization of the Emitter for High Efficiency c-Si Heterojunction Solar Cell

被引：0
作者：
Zhao, Lei [1 ,2 ]
Wang, Guanghong [1 ]
Diao, Hongwei [1 ]
Wang, Wenjing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Key Lab Solar Thermal Energy & Photovolta Syst, Inst Elect Engn, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
基金：
中国国家自然科学基金;
关键词：
activation energy; emitter; energy band offset; Fermi level; silicon heterojunction; solar cell; simulation;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
AFORS-HET was utilized to explore the optimized energy band profile of the emitter(p) for the c-Si(n) based heterojunction solar cell. To obtain high efficiency, the valence band maximum level (E-v) of the emitter should be lower than that of the c-Si base. When the valence band offset vertical bar Delta E-v vertical bar = 0.4 eV, the doping activation energy (E-a) of the emitter can be as high as about 0.36 eV. Except for this, E-a should be reduced to lower E-f. The conduction band minimum level (E-r) of the emitter should be at least 0.2 eV higher than that of the c-Si base.
引用
收藏
页码：2187 / 2191
页数：5
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