Energy Band Profile Optimization of the Emitter for High Efficiency c-Si Heterojunction Solar Cell

被引：0

作者：

Zhao, Lei ^{[1
,2
]}

Wang, Guanghong ^{[1
]}

Diao, Hongwei ^{[1
]}

Wang, Wenjing ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Key Lab Solar Thermal Energy & Photovolta Syst, Inst Elect Engn, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

基金：

中国国家自然科学基金;

关键词：

activation energy; emitter; energy band offset; Fermi level; silicon heterojunction; solar cell; simulation;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

AFORS-HET was utilized to explore the optimized energy band profile of the emitter(p) for the c-Si(n) based heterojunction solar cell. To obtain high efficiency, the valence band maximum level (E-v) of the emitter should be lower than that of the c-Si base. When the valence band offset vertical bar Delta E-v vertical bar = 0.4 eV, the doping activation energy (E-a) of the emitter can be as high as about 0.36 eV. Except for this, E-a should be reduced to lower E-f. The conduction band minimum level (E-r) of the emitter should be at least 0.2 eV higher than that of the c-Si base.

引用

页码：2187 / 2191

页数：5

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