Manipulating electrons in nanostructured semiconductors

被引：1
作者：
Kotthaus, JP
机构：
[1] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany
[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2002年 / 32卷 / 02期
关键词：
D O I：
10.1590/S0103-97332002000200002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A brief overview of electron manipulations in nanostructured semiconductors is given. Such manipulations go down to average transfer of less than a single electron per controlled step. The applications to nanodevices beyond the scaled down silicon microelectronics is also discussed.
引用
收藏
页码：257 / 258
页数：2
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