Growth of Ge islands on SrTiO3 (001) 2 x 1 reconstructed surface: Epitaxial relationship and effect of the temperature.

被引：2

作者：

Gobaut, B. ^{[1
]}

Penuelas, J. ^{[1
]}

Benamrouche, A. ^{[1
]}

Robach, Y. ^{[1
]}

Blanc, N. ^{[2
]}

Favre-Nicolin, V. ^{[2
]}

Renaud, G. ^{[2
]}

Largeau, L. ^{[3
]}

St-Girons, G. ^{[1
]}

机构：

[1] Ecole Cent Lyon, CNRS, Inst Nanotechnol Lyon, UMR5270, F-69134 Ecully, France

[2] CEA UJF, Inst Nanosci & Cryogenie, SP2M, F-38054 Grenoble 9, France

[3] CNRS, Lab Photon & Nanostruct UPR20, F-91460 Marcoussis, France

来源：

SURFACE SCIENCE | 2014年 / 624卷

关键词：

Epitaxy; X-ray diffraction; SCANNING-TUNNELING-MICROSCOPY; TEXTURE; FILMS;

D O I：

10.1016/j.susc.2014.02.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structural properties of Ge islands grown by molecular beam epitaxy on SrTiO3 (001) substrates are investigated. We report on the effect of the temperature on the epitaxial relationship and morphology of the Ge islands. By combining X-ray diffraction measurements and atomic force microscopy we evidence a correlation between the island size and shape, the structural properties of the interface and the sample texture. In particular, we show that the growth temperature affects the nature of the interface between the semiconductor and the perovskite oxide and thus the island orientation, that evolves from fully (001) oriented to a mixture of (111) and (001) oriented islands. (c) 2014 Elsevier B.V. All rights reserved.

引用

页码：130 / 134

页数：5

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