Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

被引：23
作者：
El Hichou, A. [1 ]
Addou, M. [2 ]
Mansori, M. [3 ]
Ebothe, J. [4 ]
机构：
[1] Fac Sci & Tech, LMCN, Marrakech 40000, Morocco
[2] Fac Sci, Lab Optoelectron & Physicochim Mat, Kenitra, Morocco
[3] Fac Sci & Tech, Lab Chim Mat & Environm, Marrakech 40000, Morocco
[4] Univ Reims, UFR Sci, LMEN, Lab Microscopie & Etude Nanostruct,Equipe Acceuil, F-51685 Reims 2, France
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 05期
关键词：
Fluorine-doped indium oxide; Electrical; Optical; Luminescence; Spray pyrolysis; OXIDE-FILMS; TIN-OXIDE; ELECTRICAL-PROPERTIES; PYROLYSIS TECHNIQUE; VAPOR-DEPOSITION; GAS SENSORS; GROWTH; CATHODOLUMINESCENCE; TEMPERATURE;
D O I：
10.1016/j.solmat.2008.12.014
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Fluorine-doped indium oxide thin films, F-In2O3, prepared by the spray pyrolysis technique on glass Substrates have been studied using cathodoluminescence spectroscopy, X-ray diffraction and spectrophotometry. These films, deposited at the optimal substrate temperature (T-s = 450 degrees C, crystallize in a cubic structure with a preferential orientation along the (4 0 0) direction. For this temperature, the electrical resistivity is in the order of 6 x 10(-3) Omega cm and the average optical transmission in the visible region is larger than 95%. At room temperature, the cathodoluminescence spectra of F-In2O3 present two emission peaks: blue indirect band gap peak at 410 nm and a red emission at 650 nm. (C) 2008 Elsevier B.V. All rights reserved.
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页码：609 / 612
页数：4
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