Effects of carrier concentration on the superfluid density of high-Tc cuprates

被引:98
|
作者
Panagopoulos, C [1 ]
Rainford, BD
Cooper, JR
Lo, W
Tallon, JL
Loram, JW
Betouras, J
Wang, YS
Chu, CW
机构
[1] Univ Cambridge, Interdisciplinary Res Ctr Superconductiv, Cambridge CB3 0HE, England
[2] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England
[3] Ind Res Ltd, Lower Hutt, New Zealand
[4] Univ Oxford, Dept Phys, Oxford OX1 3NP, England
[5] Univ Houston, Dept Phys, Houston, TX 77204 USA
[6] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 21期
关键词
D O I
10.1103/PhysRevB.60.14617
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The absolute values and temperature, T, dependence-Of the in-plane magnetic penetration depth of La2-xSrxCuO4 and HgBa2CuO4+delta have been measured as a function of carrier concentration. We find that the superfluid density rho(s) changes substantially and systematically with doping. The values of rho(s)(0) are closely linked to the available low-energy spectral weight as determined by the electronic entropy just above T-c, and the magnitude of the initial slope of [rho(s)(T)/rho(s)(0)] increases rapidly with carrier concentration. The results are discussed in the context of a possible relationship between-rho(s) and the normal-state (or pseudo)energy gap. [S0163-1829(99)04546-4].
引用
收藏
页码:14617 / 14620
页数:4
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