Effects of carrier concentration on the superfluid density of high-Tc cuprates

被引：97

作者：

Panagopoulos, C ^{[1
]}

Rainford, BD

Cooper, JR

Lo, W

Tallon, JL

Loram, JW

Betouras, J

Wang, YS

Chu, CW

机构：

[1] Univ Cambridge, Interdisciplinary Res Ctr Superconductiv, Cambridge CB3 0HE, England

[2] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[3] Ind Res Ltd, Lower Hutt, New Zealand

[4] Univ Oxford, Dept Phys, Oxford OX1 3NP, England

[5] Univ Houston, Dept Phys, Houston, TX 77204 USA

[6] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.60.14617

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The absolute values and temperature, T, dependence-Of the in-plane magnetic penetration depth of La2-xSrxCuO4 and HgBa2CuO4+delta have been measured as a function of carrier concentration. We find that the superfluid density rho(s) changes substantially and systematically with doping. The values of rho(s)(0) are closely linked to the available low-energy spectral weight as determined by the electronic entropy just above T-c, and the magnitude of the initial slope of [rho(s)(T)/rho(s)(0)] increases rapidly with carrier concentration. The results are discussed in the context of a possible relationship between-rho(s) and the normal-state (or pseudo)energy gap. [S0163-1829(99)04546-4].

引用

页码：14617 / 14620

页数：4

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