Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD

被引：86
作者：
Liu, Zhao Jun [1 ]
Huang, Tongde [1 ]
Ma, Jun [1 ]
Liu, Chao [1 ]
Lau, Kei May [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 03期
关键词：
AlGaN/GaN; high electron mobility transistor (HEMT); light emitting diode (LED); metal organic chemical vapor deposition (MOCVD); SI SUBSTRATE;
D O I：
10.1109/LED.2014.2300897
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic integration of high-performance AlGaN/GaN high-electron mobility transistors (HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been demonstrated by metal organic chemical vapor deposition selective growth technique. The integrated HEMT-LED exhibits a peak transconductance (G(m)) of 244 mS/mm, a maximum drain current (I-d) of 920 mA/mm, and an ON-resistance (R-on) of 2.6 Omega center dot mm. The forward voltage (V-F) of the LED is 3.1 V under an injection current of 10 mA. The integrated LED emits modulated light power efficiently at a wavelength of 470 nm by a serially connected GaN HEMT, showing potential applications such as solid-state lighting, displays, and visible light communications.
引用
收藏
页码：330 / 332
页数：3
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