Effects of CMP slurry chemistry on the zeta potential of alumina abrasives

被引:37
作者
Gopal, Tanuja [1 ]
Talbot, Jan B. [1 ]
机构
[1] Univ Calif San Diego, Chem Engn Program, La Jolla, CA 92093 USA
关键词
D O I
10.1149/1.2198128
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
colloidal behavior of alumina in typical copper chemical mechanical planarization (CMP) solutions was investigated through the measurement of zeta potential and particle cluster size distribution. The effects of various common additives on zeta potential for alumina slurries used in copper CMP were studied. Addition of 1 mM to 0.1 M glycine stabilized the zeta potential for alumina for a large pH range. Although slurry pH has the largest effect on zeta potential and particle cluster size distribution, sodium dodecyl sulfate caused alumina to maintain a small aggregate size (similar to 200 nm) while ethylenediaminetetraacetic acid caused alumina to agglomerate (similar to 1.2-2 mu m) over the entire pH range investigated. (c) 2006 The Electrochemical Society.
引用
收藏
页码:G622 / G625
页数:4
相关论文
共 17 条
[1]   The role of glycine in the chemical mechanical planarization of copper [J].
Aksu, S ;
Doyle, FM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (06) :G352-G361
[2]   Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects [J].
Basim, GB ;
Adler, JJ ;
Mahajan, U ;
Singh, RK ;
Moudgil, BM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (09) :3523-3528
[3]  
Bellmann C, 2002, TENSIDE SURFACT DET, V39, P206
[4]  
Elimelech M., 1998, Particle deposition aggregation, measurement, modeling and simulation
[5]   Effect of silica nanoparticle size on the stability of alumina/silica suspensions [J].
Fisher, ML ;
Colic, M ;
Rao, MP ;
Lange, FF .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2001, 84 (04) :713-718
[6]  
GOPAL T, 2004, THESIS U CALIFORNIA
[7]  
HIRABAYASHI H, 1996, P 1 INT VMIC SPEC C, P119
[8]  
Hong YK, 2001, ELEC SOC S, V2001, P126
[9]  
KIM IP, 2003, ELECTROCHEMICAL SOC, P121
[10]  
LOU J, 2001, IEEE T SEMICONDUCT M, V14, P112