Superconductivity in diamond

被引:999
作者
Ekimov, EA
Sidorov, VA [1 ]
Bauer, ED
Mel'nik, NN
Curro, NJ
Thompson, JD
Stishov, SM
机构
[1] Russian Acad Sci, Vereshchagin Inst High Pressure Phys, Troitsk 142190, Moscow Region, Russia
[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[3] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
基金
俄罗斯基础研究基金会; 日本学术振兴会;
关键词
D O I
10.1038/nature02449
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Diamond is an electrical insulator well known for its exceptional hardness. It also conducts heat even more effectively than copper, and can withstand very high electric fields(1). With these physical properties, diamond is attractive for electronic applications(2), particularly when charge carriers are introduced (by chemical doping) into the system. Boron has one less electron than carbon and, because of its small atomic radius, boron is relatively easily incorporated into diamond(3); as boron acts as a charge acceptor, the resulting diamond is effectively hole-doped. Here we report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (nearly 100,000 atmospheres) and temperature (2,500-2,800 K). Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature T(c)approximate to4 K; superconductivity survives in a magnetic field up to H-c2(0)greater than or equal to3.5 T. The discovery of superconductivity in diamond-structured carbon suggests that Si and Ge, which also form in the diamond structure, may similarly exhibit superconductivity under the appropriate conditions.
引用
收藏
页码:542 / 545
页数:4
相关论文
共 26 条
  • [1] [Anonymous], PROGR LOW TEMPARATUR
  • [2] MAGNETIZATION OF HARD SUPERCONDUCTORS
    BEAN, CP
    [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (06) : 250 - +
  • [3] Boron-doped homoepitaxial diamond layers: Fabrication, characterization, and electronic applications
    Borst, TH
    Weis, O
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1996, 154 (01): : 423 - 444
  • [4] Variation of the cell parameter of polycrystalline boron doped diamond films
    Brunet, F
    Deneuville, A
    Germi, P
    Pernet, M
    Gheeraert, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) : 1120 - 1125
  • [5] Cohen M.L., 1969, SUPERCONDUCTIVITY, P615
  • [6] SUPERCONDUCTIVITY IN MANY-VALLEY SEMICONDUCTORS + IN SEMIMETALS
    COHEN, ML
    [J]. PHYSICAL REVIEW, 1964, 134 (2A): : A511 - +
  • [7] Superconductivity in boron
    Eremets, MI
    Struzhkin, VW
    Mao, HK
    Hemley, RJ
    [J]. SCIENCE, 2001, 293 (5528) : 272 - 274
  • [8] FIELD J.E., 1992, PROPERTIES NATURAL S
  • [9] Fabrication of in-plane gate transistors on hydrogenated diamond surfaces
    Garrido, JA
    Nebel, CE
    Todt, R
    Rösel, G
    Amann, MC
    Stutzmann, M
    Snidero, E
    Bergonzo, P
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (06) : 988 - 990
  • [10] ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTER H-2, O-2 AND CS TREATMENT
    GEIS, MW
    TWICHELL, JC
    MACAULAY, J
    OKANO, K
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1328 - 1330