Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

被引：10

作者：

Kozlovski, V. V. ^{[1
]}

Lebedev, A. A. ^{[2
]}

Lomasov, V. N. ^{[1
]}

Bogdanova, E. V. ^{[2
]}

Seredova, N. V. ^{[2
]}

机构：

[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 08期

基金：

英国科研创新办公室;

关键词：

PROTON IRRADIATION; SILICON-CARBIDE; DEFECTS; CENTERS;

D O I：

10.1134/S1063782614080156

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of electron irradiation on n-4H-SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be V (d) a parts per thousand 0.25 cm(-1). Total conductivity compensation in samples with an initial carrier concentration of (1-2) x 10(15) cm(-2) is observed at irradiation doses of similar to 5 x 10(15) cm(-2). Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4H-SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed.

引用

页码：1006 / 1009

页数：4

共 14 条

[11] Carrier Removal in Electron Irradiated 4H and 6H SiC [J].

Mikelsen, Mads ;

Grossner, Ulrike ;

Bleka, Jan H. ;

Monakhov, Edouard V. ;

Svensson, Bengt G. ;

Yakirnova, Rositza ;

Henry, Anne ;

Janzen, Erik ;

Lebedev, AlexanderA. .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :425-+

[12] Deep levels created by low energy electron irradiation in 4H-SiC [J].

Storasta, L ;

Bergman, JP ;

Janzén, E ;

Henry, A ;

Lu, J .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) :4909-4915

[13] Influence of proton irradiation on recombination current in 6H-SiC pn structures [J].

Strel'chuk, AM ;

Kozlovski, VV ;

Savkina, NS ;

Rastegaeva, MG ;

Andreev, AN .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :441-445

[14] Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H-and 6H-silicon carbide [J].

Weidner, M ;

Frank, T ;

Pensl, G ;

Kawasuso, A ;

Itoh, H ;

Krause-Rehberg, R .

PHYSICA B-CONDENSED MATTER, 2001, 308 :633-636

← 1 2 →