Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

被引：10

作者：

Kozlovski, V. V. ^{[1
]}

Lebedev, A. A. ^{[2
]}

Lomasov, V. N. ^{[1
]}

Bogdanova, E. V. ^{[2
]}

Seredova, N. V. ^{[2
]}

机构：

[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 08期

基金：

英国科研创新办公室;

关键词：

PROTON IRRADIATION; SILICON-CARBIDE; DEFECTS; CENTERS;

D O I：

10.1134/S1063782614080156

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of electron irradiation on n-4H-SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be V (d) a parts per thousand 0.25 cm(-1). Total conductivity compensation in samples with an initial carrier concentration of (1-2) x 10(15) cm(-2) is observed at irradiation doses of similar to 5 x 10(15) cm(-2). Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4H-SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed.

引用

页码：1006 / 1009

页数：4

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