The effect of plasma-nitrided titanium surfaces on osteoblastic cell adhesion, proliferation, and differentiation

被引:13
作者
Ferraz, Emanuela P. [1 ]
Sa, Juliana C. [2 ]
de Oliveira, Paulo T. [1 ]
Alves, Clodomiro, Jr. [2 ]
Beloti, Marcio M. [1 ]
Rosa, Adalberto L. [1 ]
机构
[1] Univ Sao Paulo, Cell Culture Lab, Sch Dent Ribeirao Preto, BR-14040904 Sao Paulo, Brazil
[2] Univ Fed Rio Grande do Norte, Dept Mech Engn, BR-59072970 Natal, RN, Brazil
基金
巴西圣保罗研究基金会;
关键词
osteoblast; osseointegration; titanium; surface treatment; plasma nitriding; BONE-FORMATION; TOPOGRAPHY; EXPRESSION; PHENOTYPE; ROUGHNESS;
D O I
10.1002/jbm.a.34761
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
In this study, we evaluated the effect of new plasma-nitrided Ti surfaces on the progression of osteoblast cultures, including cell adhesion, proliferation and differentiation. Ti surfaces were treated using two plasma-nitriding protocols, hollow cathode for 3 h (HC 3 h) and 1 h (HC 1 h) and planar for 1 h. Untreated Ti surfaces were used as control. Cells derived from human alveolar and rat calvarial bones were cultured on Ti surfaces for periods of up to 14 days and the following parameters were evaluated: cell morphology, adhesion, spreading and proliferation, alkaline phosphatase (ALP) activity, extracellular matrix mineralization, and gene expression of key osteoblast markers. Plasma-nitriding treatments resulted in Ti surfaces with distinct physicochemical characteristics. The cell adhesion and ALP activity were higher on plasma-nitrided Ti surfaces compared with untreated one, whereas cell proliferation and extracellular matrix mineralization were not affected by the treatments. In addition, the plasma-nitrided Ti surfaces increased the ALP, reduced the osteocalcin and did not affect the Runx2 gene expression. We have shown that HC 3 h and planar Ti surfaces slightly favored the osteoblast differentiation process, and then these surfaces should be considered for further investigation using preclinical models. (c) 2013 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 102A: 991-998, 2014.
引用
收藏
页码:991 / 998
页数:8
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