Synthesis of 3-dimensional porous graphene nanosheets using electron cyclotron resonance plasma enhanced chemical vapour deposition

被引:22
|
作者
Thomas, Rajesh [1 ]
Rao, G. Mohan [1 ]
机构
[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
关键词
CARBON NANOTUBES; ELECTROCHEMICAL PERFORMANCE; ATMOSPHERIC-PRESSURE; GROWTH; FIELD; OXIDE; EXFOLIATION; EFFICIENCY; NANOWALLS; PHASE;
D O I
10.1039/c5ra09087c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Microwave plasma driven chemical vapour deposition was used to synthesize graphene nanosheets from a mixture of acetylene and hydrogen gas molecules. In this plasma, acetylene decomposes to carbon atoms that form nanostructures in the outlet plasma stream and get deposited on the substrate. The GNS consists of a few layers of graphene aligned vertically to the substrate. Graphene layers have been confirmed by high-resolution transmission electron microscopy, and Raman spectral studies were conducted to observe the defective nature of the sample. The growth of nanosheets in a vertical direction is assumed to be due to the effect of electric field and from the difference in the deposition rate in the axial and parallel directions. These vertical graphene sheets are attractive for various applications in energy storage and sensors.
引用
收藏
页码:84927 / 84935
页数:9
相关论文
共 50 条
  • [1] Deposition of aluminium nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition
    Ecke, G
    Eichhorn, G
    Pezoldt, J
    Reinhold, C
    Stauden, T
    Supplieth, F
    SURFACE & COATINGS TECHNOLOGY, 1998, 98 (1-3): : 1503 - 1509
  • [2] Plasma enhanced chemical vapour deposition of SiOxNy in an integrated distributed electron cyclotron resonance reactor
    Hofrichter, A
    Bulkin, P
    Drévillon, B
    APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 447 - 450
  • [3] Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition
    Flewitt, AJ
    Dyson, AP
    Robertson, J
    Milne, WI
    THIN SOLID FILMS, 2001, 383 (1-2) : 172 - 177
  • [4] Electron cyclotron resonance plasma enhanced chemical vapour deposition and optical properties of SiOx thin films
    Bulkin, PV
    Swart, PL
    Lacquet, BM
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 226 (1-2) : 58 - 66
  • [5] Plasma enhanced chemical vapour deposition of silica thin films in an integrated distributed electron cyclotron resonance reactor
    Bulkin, P
    Bertrand, N
    Drevillon, B
    Rostaing, JC
    Delmotte, F
    Hugon, MC
    Agius, B
    THIN SOLID FILMS, 1997, 308 : 63 - 67
  • [6] Synthesis of free standing carbon nanosheet using electron cyclotron resonance plasma enhanced chemical vapor deposition
    Thomas, Rajesh
    Rao, G. Mohan
    APPLIED SURFACE SCIENCE, 2012, 258 (11) : 4877 - 4880
  • [7] Deposition of dielectrics using a matrix distributed electron cyclotron resonance plasma enhanced chemical vapor deposition system
    Botha, R.
    Ibrahim, B. Haj
    Bulkin, P.
    Drevillon, B.
    THIN SOLID FILMS, 2007, 515 (19) : 7594 - 7597
  • [8] Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate
    Bera, LK
    Ray, SK
    Banerjee, HD
    Maiti, CK
    BULLETIN OF MATERIALS SCIENCE, 1998, 21 (04) : 283 - 286
  • [9] Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate
    L K Bera
    S K Ray
    H D Banerjee
    C K Maiti
    Bulletin of Materials Science, 1998, 21 : 283 - 286
  • [10] Electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD): A versatile tool in the fabrication of optoelectronic devices
    Mascher, P
    Wojcik, J
    INTEGRATED OPTOELECTRONICS, PROCEEDINGS, 2002, 2002 (04): : 3 - 22