Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays

被引：52
作者：
Hong, Chi-Chang [1 ,2 ]
Ahn, Hyeyoung [1 ,2 ]
Wu, Chen-Ying [3 ]
Gwo, Shangjr [3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
来源：
OPTICS EXPRESS | 2009年 / 17卷 / 20期
关键词：
MOLECULAR-BEAM EPITAXY; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; TEMPERATURE; BLUE; SHIFT; LUMINESCENCE; EMISSION; GROWTH;
D O I：
10.1364/OE.17.017227
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
引用
收藏
页码：17227 / 17233
页数：7
相关论文
共 22 条
  • [1] ARCHER RJ, 1972, J ELECT MAT, V1, P127
  • [2] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
    Calleja, E
    Sánchez-García, MA
    Sánchez, FJ
    Calle, F
    Naranjo, FB
    Muñoz, E
    Jahn, U
    Ploog, K
    [J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16826 - 16834
  • [3] Localized states in InxGa1-xN epitaxial film
    Chang, H. -S.
    Hsu, T. M.
    Chuang, T. -F.
    Chen, W-Y.
    Gwo, S.
    Shen, C. -H.
    [J]. SOLID STATE COMMUNICATIONS, 2009, 149 (1-2) : 18 - 20
  • [4] Strain relaxation and quantum confinement in InGaN/GaN nanoposts
    Chen, HS
    Yeh, DM
    Lu, YC
    Chen, CY
    Huang, CF
    Tang, TY
    Yang, CC
    Wu, CS
    Chen, CD
    [J]. NANOTECHNOLOGY, 2006, 17 (05) : 1454 - 1458
  • [5] Gallium nitride nanorod arrays as low-refractive-index transparent media in the entire visible spectral region
    Chen, Hung-Ying
    Lin, Hon-Way
    Wu, Chen-Ying
    Chen, Wei-Chun
    Chen, Jyh-Shin
    Gwo, Shangjr
    [J]. OPTICS EXPRESS, 2008, 16 (11): : 8106 - 8116
  • [6] Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
    Chen, Hung-Ying
    Lin, Hon-Way
    Shen, Chang-Hong
    Gwo, Shangjr
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (24)
  • [7] Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands
    Chiu, C. H.
    Lu, T. C.
    Huang, H. W.
    Lai, C. F.
    Kao, C. C.
    Chu, J. T.
    Yu, C. C.
    Kuo, H. C.
    Wang, S. C.
    Lin, C. F.
    Hsueh, T. H.
    [J]. NANOTECHNOLOGY, 2007, 18 (44)
  • [8] S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
    Cho, YH
    Gainer, GH
    Fischer, AJ
    Song, JJ
    Keller, S
    Mishra, UK
    DenBaars, SP
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (10) : 1370 - 1372
  • [9] VEGARD LAW
    DENTON, AR
    ASHCROFT, NW
    [J]. PHYSICAL REVIEW A, 1991, 43 (06): : 3161 - 3164
  • [10] Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire
    Eliseev, PG
    Osinski, M
    Lee, JY
    Sugahara, T
    Sakai, S
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (03) : 332 - 341
123