Mimicking the spike-timing dependent plasticity in HfO2-based memristors at multiple time scales

被引：17
|
作者：
Maestro-Izquierdo, M. [1 ]
Gonzalez, M. B. [1 ]
Campabadal, F. [1 ]
机构：
[1] IMB CNM CSIC, Inst Microelect Barcelona, Campus UAB, Bellaterra 08193, Spain
来源：
MICROELECTRONIC ENGINEERING | 2019年 / 215卷
关键词：
Electronic synapses; HfO2; Memristor; Resistive switching; Spike-timing dependent plasticity (STDP); Time scale; RRAM DEVICES; SYNAPSES;
D O I：
10.1016/j.mee.2019.111014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, TiN/Ti/HfO2/W memristors have been investigated to mimic the spike-time dependent plasticity (STDP) of biological synapses at multiple time scales. For this purpose, a smart software tool has been implemented to control the instrumentation and to perform a dedicated ultra-fast pulsed characterization. Different time scales, from tens of milliseconds to hundreds of nanoseconds, have been explored to emulate the STDP learning rule in electronic synapses. The impact of such times on the synaptic weight potentiation and depression characteristics has also been discussed.
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页数：5
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