A silicon carbide pressure sensor for harsh environment

Glenn Research Center and Kulite Semiconductor Products have demonstrated, through their preliminary work, applicability of SiC for high-temperature pressure sensing. These experiments conducted on a non-hermetic package have shown survivability and stability up to 500degreesC in a turbine engine environment. These pressure sensors have been fabricated for an upper limit pressure of 1000 psia. For space applications such as Mars Missions, the pressure sensor requirements are stringent in accuracy at a lower range of pressure (25 psia), temperature requirements up to 1000degreesC, and tolerance to radiation. To achieve this goal, new SiC sensors are being developed which will operate at low pressures, 25 psia maximum. This paper will describe the developmental efforts of the low pressure SiC pressure sensor and its preliminary performance characteristics.