Epitaxial SiC formation induced by medium energy ions on Si(111) at room temperature

被引：10

作者：

Kumar, Praveen ^{[1
,2
,5
]}

Nair, Lekha ^{[3
]}

Bera, Santanu ^{[4
]}

Mehta, B. R. ^{[5
]}

Shivaprasad, S. M. ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India

[2] Natl Phys Lab, Surface Phys & Nanostruct Grp, New Delhi 110012, India

[3] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India

[4] BARCF Indira Gandhi Ctr Atom Res, WSCD, Kalpakkam 603102, Tamil Nadu, India

[5] Indian Inst Technol, Dept Phys, New Delhi 110016, India

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 15期

关键词：

X-ray photoelectron spectroscopy; Silicon carbide; Ion beam induced reactions; Reaction threshold; ELECTRONIC-STRUCTURE; SI(001); GROWTH;

D O I：

10.1016/j.apsusc.2009.02.075

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the search for silicon technology compatible substrate for III-nitride epitaxy, we present a proof-of-concept for forming epitaxial SiC layer on Si(1 11). AC/Si interface formed by ion sputtering is exposed to 100-1500 eV Ar+ ions, inducing a chemical reaction to form SiC, as observed by core-level X-ray photoelectron spectroscopy (XPS). Angle dependent XPS studies shows forward scattering feature that manifest the epitaxial SiC layer formation, while the valence band depicts the metal to insulator phase change. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6802 / 6805

页数：4

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