Pb0.3Sr0.7TiO3 thin films for high-frequency phase shifter applications

被引：49
作者：
Jain, M [1 ]
Karan, NK
Katiyar, RS
Bhalla, AS
Miranda, FA
Van Keuls, FW
机构：
[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[3] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[4] Ohio Aerosp Inst, Cleveland, OH 44142 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 02期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1063/1.1771459
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pb0.3Sr0.7TiO3 (PST30) thin films were synthesized on platinized silicon (Pt/Si) and lanthanum aluminate (LAO) substrates using chemical solution deposition technique. The films on LAO substrate were highly (100) oriented, whereas the films on Pt/Si substrate were polycrystalline. The low dielectric loss in the PST30/LAO films makes them attractive for fabricating tunable dielectric devices. An eight-element coupled microstrip phase shifter was fabricated on PST30/LAO film and tested in the frequency range similar to15-17 GHz. The maximum figure of merit (kappa=phase shift per dB loss) of similar to56degrees/dB was obtained for PST30 film, which was better than commonly observed value in pure barium strontium titanate films: This makes PST30 a potential candidate material for further investigations for microwave applications. (C) 2004 American Institute of Physics.
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页码：275 / 277
页数：3
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