Thin film solar cell based on CuSbS2 absorber prepared by chemical bath deposition (CBD)

被引：71

作者：

Macias, Cesar ^{[1
]}

Lugo, Shadai ^{[2
]}

Benitez, Angel ^{[1
]}

Lopez, Israel ^{[1
]}

Kharissov, Boris ^{[1
]}

Vazquez, Alejandro ^{[1
]}

Pena, Yolanda ^{[1
]}

机构：

[1] Univ Autonoma Nuevo Leon, Fac Ciencias Quim, Lab Mat 1, Av Univ, San Nicolas De Los Garza 66451, Nuevo Leon, Mexico

[2] Ctr Invest Mat Avanzados SC, Unidad Monterrey, Alianza Norte 202, Apodaca 66628, Nuevo Leon, Mexico

来源：

MATERIALS RESEARCH BULLETIN | 2017年 / 87卷

关键词：

CuSbS2; Thin films; Chemical bath deposition; Absorber; Solar cells; CRYSTAL-GROWTH; COPPER; SB2S3;

D O I：

10.1016/j.materresbull.2016.11.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuSbS2 has been proposed as an alternative to other absorber materials, such as CIGS, because it's an earth abundant, low cost and nontoxic material; also, its suitable band gap and high absorption coefficient has a potential application in photovoltaic devices. This work reports the CuSbS2 thin films preparation and characterization, grown by a one-step chemical bath deposition using thin films which were heat treated at 350, 380 and 400 degrees C. X-ray diffraction analysis showed the formation of orthorhombic CuSbS2 after the films heating. The band gap energy value of the CuSbS2 decreased from 1.96 to 1.54 eV due to the heat treatment at 350-400 degrees C. The CuSbS2 films showed p-type conductivity and XPS spectrum shows the oxidation states of the elements in the obtained thin films. The films which were heat treated at 380 degrees C showed a good crystalline and improved phase purity. The material was incorporated into a SnO2:F/CdS/Sb2S3/CuSbS2/C:Ag structure to evaluate its potential application as absorber in a solar cell achieving an encouraging 0.66% of conversion efficiency with 0382 V of Voc, 532 mA/cm(2) of Jsc and 32% of FF. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：161 / 166

页数：6

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