Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond

被引：10

作者：

Gaubas, E. ^{[1
]}

Ceponis, T. ^{[1
]}

Jasiunas, A. ^{[1
]}

Kalendra, V. ^{[1
]}

Pavlov, J. ^{[1
]}

Kazuchits, N. ^{[2
]}

Naumchik, E. ^{[2
]}

Rusetsky, M. ^{[2
]}

机构：

[1] Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania

[2] Belarusian State Univ, Minsk 220030, BELARUS

来源：

关键词：

Synthetic diamond; Diamond crystal; HTHP; Defect characterization; Impurity characterization; Microstructure; SINGLE-SUBSTITUTIONAL NITROGEN; INFRARED-ABSORPTION; SYNTHETIC DIAMOND; NICKEL; CVD; CENTERS; EPR;

D O I：

10.1016/j.diamond.2014.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The profiling of the microwave probed photoconductivity transients and of the time resolved photoluminescence spectra has simultaneously been performed on the synthetic diamond wafer samples in order to clarify correlation of the distribution of the grown-in defects and carrier radiative and non-radiative recombination channels. The wafer samples were sliced from the diamond single crystals, synthesized by the high pressure and high temperature (HPHT) technology using the Ni-Fe liquid solvent/catalyst system. To estimate the microscopic characteristics of the grown-in defects, the EPR spectroscopy has been carried out. The changes of carrier lifetime, ascribed to the radiative and non-radiative recombination, have been resolved. The correlation between the parameters extracted from the absorption spectra and recombination characteristics has been obtained. The prevailing grown-in point defects, associated with neutral and charged nitrogen impurity complexes as well as the pairs of nitrogen atoms on neighbouring sites, and the nickel precipitates have been unveiled. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：15 / 26

页数：12

共 46 条

[1]

[Anonymous], ADV COND MATTER PHYS

[2]

Blakemore J. S., 1962, Semiconductor Statistics

[3]

Bokiy G.B., 1986, Natural and Synthetic Diamonds

[4]

Bourgoin J., 1983, Point defects in semiconductors

[5] THE RELATIONSHIP BETWEEN INFRARED-ABSORPTION AND THE A DEFECT CONCENTRATION IN DIAMOND [J].

BOYD, SR ;

KIFLAWI, I ;

WOODS, GS .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (06) :1149-1153

[6] GROWTH-SECTOR DEPENDENCE OF OPTICAL-FEATURES IN LARGE SYNTHETIC DIAMONDS [J].

BURNS, RC ;

CVETKOVIC, V ;

DODGE, CN ;

EVANS, DJF ;

ROONEY, MLT ;

SPEAR, PM ;

WELBOURN, CM .

JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) :257-279

[7] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[8] TRANSFORMATION OF STATE OF NITROGEN IN DIAMOND [J].

CHRENKO, RM ;

TUFT, RE ;

STRONG, HM .

NATURE, 1977, 270 (5633) :141-144

[9] THE SEGREGATION OF NICKEL-RELATED OPTICAL-CENTERS IN THE OCTAHEDRAL GROWTH SECTORS OF SYNTHETIC DIAMOND [J].

COLLINS, AT ;

KANDA, H ;

BURNS, RC .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 61 (05) :797-810

[10] C-13, N-14 AND N-15 ENDOR MEASUREMENTS ON THE SINGLE SUBSTITUTIONAL NITROGEN CENTER (P1) IN DIAMOND [J].

COX, A ;

NEWTON, ME ;

BAKER, JM .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (02) :551-563

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