In-situ APXPS and STM Study of the Activation of H2 on ZnO(10(1)over-bar0) Surface
被引:11
作者:
Liu Qiang
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机构:
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Liu Qiang
[1
,4
]
Han Yong
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机构:
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Han Yong
[1
,3
]
Cao Yunjun
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机构:
Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Liaoning, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Cao Yunjun
[2
]
Li Xiaobao
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Li Xiaobao
[1
,4
]
Huang Wugen
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机构:
Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Liaoning, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Huang Wugen
[2
]
Yu Yi
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机构:
Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Yu Yi
[3
]
Yang Fan
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Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Liaoning, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Yang Fan
[2
]
Bao Xinhe
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Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Liaoning, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Bao Xinhe
[2
]
Li Yimin
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机构:
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Li Yimin
[1
,3
]
Liu Zhi
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机构:
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Liu Zhi
[1
,3
]
机构:
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Liaoning, Peoples R China
[3] Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R China
[4] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Cu/ZnO/Al2O3 is one of the most widely used catalysts in industrial methanol synthesis. However, the reaction mechanism and the nature of the active sites on the catalyst for this reaction are still under debate. Thus, detailed information is needed to understand the catalytic processes occurring on the surface of this catalyst. H-2 is one of the reaction gases in methanol synthesis. Studies of the activation and dissociation behaviors of H-2 on ZnO surfaces are of great importance in understanding the catalytic mechanism of methanol synthesis. In this work, the activation and dissociation processes of H-2 on a ZnO(10 (1) over bar0) single crystal surface were investigated in-situ using ambient-pressure X-ray photoelectron spectroscopy (APXPS) and scanning tunneling microscopy (STM), two powerful surface characterization techniques. In the APXPS experiments, results indicated the formation of hydroxyl (OH) species on the ZnO single crystal surface at room temperature in 0.3 mbar (1 mbar = 100 Pa) H-2 atmosphere. Meanwhile, STM measurements showed that the ZnO surface was reconstructed from a (1 x 1) to a (2 x 1) structure upon introduction of Hz. These observations revealed adsorption behaviors of H-2 the same as those of atomic H on a ZnO(10 (1) over bar0) surface as seen in previous studies, which could be evidence of the dissociative adsorption of H-2 on a ZnO surface. However, H2O adsorption on ZnO surfaces can also result in the formation of OH species, which can be observed using XPS. The STM results show that the exposure of H2O also leads to the reconstruction from a (1 x 1) to a (2 x 1) structure on the ZnO(10 (1) over bar0) surface upon H-2 introduction. Hence, it is necessary to exclude the influence of H2O in this work, because there may be trace amounts of H2O in the H-2 gas. Therefore, we performed a comparative study of H-2 and H2O on ZnO(10 (1) over bar0) single crystal surface. A downward band bending of 0.3 eV was observed on the ZnO surface in 0.3 mbar H-2 atmosphere using APXPS, while negligible band bending was shown in the case of the H2O atmosphere. Moreover, thermal stability studies revealed that the OH group formed in the H-2 atmosphere desorbed at a higher temperature than the one resulting from H2O adsorption, meaning that the two OH groups formed on the ZnO surface were different. Results in this work provide evidence of the dissociative adsorption of H-2 on the ZnO(10 (1) over bar0) surface at room temperature and atmospheric pressure. This is in contrast to previous findings, in which no H-2 dissociation on a ZnO(10 (1) over bar0) surface under ultra-high vacuum conditions was observed, indicating that the activation of H-2 on ZnO surfaces is a pressure dependent process.
机构:
Univ Western Ontario, London, ON N6G 0J3, Canada
Univ S Australia, ACeSSS, Mawson Lakes, SA 5095, AustraliaUniv Western Ontario, London, ON N6G 0J3, Canada
Biesinger, Mark C.
;
Lau, Leo W. M.
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机构:
Univ Western Ontario, London, ON N6G 0J3, Canada
Univ Western Ontario, Dept Chem, London, ON N6A 5B7, CanadaUniv Western Ontario, London, ON N6G 0J3, Canada
Lau, Leo W. M.
;
Gerson, Andrea R.
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h-index: 0
机构:
Univ S Australia, ACeSSS, Mawson Lakes, SA 5095, AustraliaUniv Western Ontario, London, ON N6G 0J3, Canada
Gerson, Andrea R.
;
Smart, Roger St. C.
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h-index: 0
机构:
Univ S Australia, ACeSSS, Mawson Lakes, SA 5095, AustraliaUniv Western Ontario, London, ON N6G 0J3, Canada
机构:
Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Heinhold, R.
;
Williams, G. T.
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机构:
Global Innovat Ctr, Element Six Ltd, Didcot OX11 0QR, Oxon, EnglandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Williams, G. T.
;
Cooil, S. P.
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机构:
Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Cooil, S. P.
;
Evans, D. A.
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h-index: 0
机构:
Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Evans, D. A.
;
Allen, M. W.
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h-index: 0
机构:
Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
机构:
Univ Western Ontario, London, ON N6G 0J3, Canada
Univ S Australia, ACeSSS, Mawson Lakes, SA 5095, AustraliaUniv Western Ontario, London, ON N6G 0J3, Canada
Biesinger, Mark C.
;
Lau, Leo W. M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Western Ontario, London, ON N6G 0J3, Canada
Univ Western Ontario, Dept Chem, London, ON N6A 5B7, CanadaUniv Western Ontario, London, ON N6G 0J3, Canada
Lau, Leo W. M.
;
Gerson, Andrea R.
论文数: 0引用数: 0
h-index: 0
机构:
Univ S Australia, ACeSSS, Mawson Lakes, SA 5095, AustraliaUniv Western Ontario, London, ON N6G 0J3, Canada
Gerson, Andrea R.
;
Smart, Roger St. C.
论文数: 0引用数: 0
h-index: 0
机构:
Univ S Australia, ACeSSS, Mawson Lakes, SA 5095, AustraliaUniv Western Ontario, London, ON N6G 0J3, Canada
机构:
Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Heinhold, R.
;
Williams, G. T.
论文数: 0引用数: 0
h-index: 0
机构:
Global Innovat Ctr, Element Six Ltd, Didcot OX11 0QR, Oxon, EnglandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Williams, G. T.
;
Cooil, S. P.
论文数: 0引用数: 0
h-index: 0
机构:
Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Cooil, S. P.
;
Evans, D. A.
论文数: 0引用数: 0
h-index: 0
机构:
Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Evans, D. A.
;
Allen, M. W.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand