Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors

被引：31

作者：

Bermundo, Juan Paolo ^{[1
]}

Ishikawa, Yasuaki ^{[1
]}

Yamazaki, Haruka ^{[1
]}

Nonaka, Toshiaki ^{[2
]}

Uraoka, Yukiharu ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ikoma, Nara 6300192, Japan

[2] AZ Elect Mat Mfg Japan KK, Kakegawa, Shizuoka 4371412, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 02期

关键词：

D O I：

10.1149/2.011402jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the fabrication of highly reliable amorphous InGaZnO (a-IGZO) passivated by a polysilsesquioxane-based passivation layer using a simple solution process. Results show that a copolymer of methylsilsesquioxane and phenylsilsesquioxane is an effective passivation layer. a-IGZO thin film transistors (TFT) passivated by this copolymer showed a small threshold voltage (V-th) shift of 0.1 V during positive bias stress, very small V-th shift of less than 0.1 V during negative bias stress and a minimal V-th shift (similar to -2.4 V) during negative bias illumination stress. These results demonstrate the potential of easy to fabricate polysilsesquioxane-based passivation layers as effective passivation materials. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：Q16 / Q19

页数：4

共 24 条

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