Excess carrier lifetimes in Ge layers on Si

被引：64

作者：

Geiger, R. ^{[1
]}

Frigerio, J. ^{[2
]}

Sueess, M. J. ^{[1
,3
,4
]}

Chrastina, D. ^{[2
]}

Isella, G. ^{[2
]}

Spolenak, R. ^{[3
]}

Faist, J. ^{[5
]}

Sigg, H. ^{[1
]}

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Politecn Milan, L NESS, Dipartimento Fis, I-22100 Como, Italy

[3] ETH, Lab Nanomet, Dept Mat Sci, CH-8093 Zurich, Switzerland

[4] ETH, Sci Ctr Opt & Electron Microscopy SCOPEM, CH-8093 Zurich, Switzerland

[5] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期

基金：

瑞士国家科学基金会;

关键词：

SURFACE RECOMBINATION; GERMANIUM; SILICON; DENSITY;

D O I：

10.1063/1.4865237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface. (C) 2014 AIP Publishing LLC.

引用

页数：5

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