Chemical structure of the (Zn1-x, Mgx)O/Culn(S, Se)2 interface in thin film solar cells

被引：8
|
作者：
Erfurth, F. [1 ]
Hussmann, B. [1 ]
Schoell, A. [1 ]
Reinert, F. [1 ,2 ]
Grimm, A. [3 ]
Lauermann, I. [3 ]
Baer, M. [3 ]
Niesen, Th. [4 ]
Palm, J. [4 ]
Visbeck, S. [4 ]
Weinhardt, L. [1 ]
Umbach, E. [1 ,5 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Forschungszentrum Karlsruhe, D-97074 Wurzburg, Germany
[3] Helmholtz Zentrum Berlin Materialien & Energie, D-14109 Berlin, Germany
[4] AVANCIS GmbH & Co KG, D-81739 Munich, Germany
[5] Forschungszentrum Karlsruhe, D-76133 Karlsruhe, Germany
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 12期
关键词：
PERFORMANCE;
D O I：
10.1063/1.3230071
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of the interface between a magnetron sputtered (Zn1-x, Mg-x)O buffer layer and a CuIn(S, Se)(2) absorber in thin film solar cells has been investigated by x-ray photoelectron spectroscopy and x-ray induced Auger electron spectroscopy. Detailed analysis of the spectra shows the incorporation of Zn into the absorber surface in the initial stage of the deposition process forming ZnS and/or ZnSe bonds. As a result we find the buffer layer to be Zn-depleted near the interface. (C) 2009 American Institute of Physics. [doi:10.1063/1.3230071]
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页数：3
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