Growth and Characterization of Type I Quantum Wells Based on ZnCdSe/ZnTe Type II Heterostructures Confined within ZnSe Barriers

We present our results related to the growth, photoluminescence characterization and modelling of a quantum well (QW) involving a type II heterostructure, Zn1-x Cd (x) Se/ZnTe/Zn1-x Cd (x) Se, confined within ZnSe barriers with a type I band alignment. We show that this type of hybrid QWs may be employed for the elaboration of Zn1-x Cd (x) Se/ZnSe/GaAs based red emitters without exceeding a Cd content around 42%. The design of the ZnSe/Zn1-x Cd (x) Se/ZnTe/Zn1-x Cd (x) Se/ZnSe QW was based on calculations employing the transfer matrix method under the effective mass, envelope function approximation. The QW was epitaxially grown at 275A degrees C on a semi-insulating GaAs (001) substrate by a combination of molecular beam epitaxy for the ZnSe barriers, submonolayer pulsed beam epitaxy for the ZnCdSe layers of the QW and atomic layer epitaxy for the central ZnTe QW layer. A heterostructure with a central region of 2 ZnTe monolayers surrounded at each side by seven monolayers of Zn1-x Cd (x) Se, with x similar to 0.41, presented a room temperature exitonic deep red emission with a peak at 1.829 eV.