A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications

被引：15

作者：

Srinivasan, P. ^{[1
]}

Colestock, P. ^{[1
]}

Samuels, T. ^{[1
]}

Moss, S. ^{[1
]}

Guarin, F. ^{[1
]}

Min, B. ^{[1
]}

机构：

[1] GLOBALFOUNDRIES, Santa Clara, CA 95054 USA

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

RF; reliability; 5G; mmWave; SOI; Power Amplifier;

D O I：

10.1109/irps45951.2020.9129588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new methodology to evaluate reliability under RF mmWave (f(0)>=28GHz) conditions is proposed. RF stress was performed on a pre-matched Power Amplifier (PA) single transistor cell for various RF input power (P-in) and drain voltage (V-DS) levels to measure RF degradation. A good correlation between RF time slopes to DC Hot Carrier Injection (HCI) is observed. PA simulations were performed using energy driven model for HCI. Results show good correlation between measured data establishing the validity of the reliability models under mmWave conditions.

引用

页数：4

共 5 条

[1]

[Anonymous], 2018, CADENCE RELXPERT MAN

[2]

Rauch S. E, 2018 INT INT REL WOR

[3] The energy-driven paradigm of NMOSFET hot-carrier effects [J].