The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition

被引：5

作者：

Fu, S. F. ^{[1
]}

Wang, S. M. ^{[1
]}

Lee, L. ^{[1
]}

Chen, C. Y. ^{[1
]}

Tsai, W. C. ^{[1
]}

Chou, W. C. ^{[1
]}

Lee, M. C. ^{[1
]}

Chang, W. H. ^{[1
]}

Chen, W. K. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 29期

关键词：

MORPHOLOGIES; FILMS;

D O I：

10.1088/0957-4484/20/29/295702

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.

引用

页数：4

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