A Novel ZVS Range Enhancement Technique of a High-Voltage Dual Active Bridge Converter Using Series Injection

被引：23

作者：

Tripathi, Awneesh Kumar ^{[1
]}

Mainali, Krishna ^{[1
]}

Madhusoodhanan, Sachin ^{[1
]}

Kadavelugu, Arun ^{[1
]}

Vechalapu, Kasunaidu ^{[1
]}

Hatua, Kamalesh ^{[2
]}

机构：

[1] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

[2] Indian Inst Technol Madras, Dept Elect Engn, Chennai 600036, Tamil Nadu, India

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2017年 / 32卷 / 06期

基金：

美国国家科学基金会;

关键词：

Insulated gate bipolar transistors; parasitic capacitance; power MOSFET; reactive power control; silicon carbide; switching loss; transformers; zero voltage switching; HIGH-EFFICIENCY; SIC IGBT; POWER; FREQUENCY; DESIGN; MOSFET;

D O I：

10.1109/TPEL.2016.2602285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a novel technique is proposed to extend the region of zero voltage switching (ZVS) of a dual active bridge (DAB) dc-dc converter using an auxiliary series injection transformer. The series voltage injection by the series transformer helps us to maintain ZVS by controlling the reactive power flow through the main converter of the DAB. A model for the series compensation is developed to compute the phase angle of the series voltage to obtain the optimum efficiency over the entire region of operation. The proposed technique is validated through simulations and the corresponding converter loss reduction is presented. The system is implemented on a high-voltage hardware with 6kV-270V DAB using 10-kV SiC MOSFET-based converter in the primary and 1200-V SiC MOSFET on the secondary side of the transformer and the corresponding results are presented.

引用

页码：4231 / 4245

页数：15

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