Tunable Holding-Voltage High Voltage ESD Devices

被引：0
|
作者：
Lee, Jian-Hsing [1 ]
Iyer, Natarajan Mahadeva [2 ]
机构：
[1] VIS Micro Inc, Device Dept, Campbell, CA 95008 USA
[2] Allegro Microsyst, Qual & Reliabil, 100 Crowley Dr, Marlborough, MA USA
来源：
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2019年
关键词：
Laterally Diffused MOSFET (LDMOS); Transmission-Line Pulse (TLP); Electrostatic-Discharge (ESD); Safe-Operation Area (SOA);
D O I：
10.1109/irps.2019.8720522
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Physical understanding of the interaction of junction depth and the location of different Drain-side N-type implants on the holding-voltage of LDNMOS is presented. Using N-type well implants to modulate the junction depth, width and doping concentration results in change of the holding-voltage of LDMOS since the drain potential is a function of position in two dimensions.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] Design of a cascade-MOS-triggered SCR with high holding-voltage for high- voltage ESD protection
    Zhu, Ling
    Liang, Hailian
    Gu, Xiaofeng
    Zhang, Xiaoxin
    Yan, Dawei
    SOLID-STATE ELECTRONICS, 2020, 171
  • [2] PNP-eSCR ESD Protection Device with Tunable Trigger and Holding Voltage for High Voltage Applications
    Lai, Da-Wei
    Zhao, Shuang
    Gao, Jian
    Smedes, Theo
    2016 38TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD), 2016,
  • [3] Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection
    Wang, Yang
    Jin, Xiangliang
    Yang, Liu
    Jiang, Qi
    Yuan, Huihui
    MICROELECTRONICS RELIABILITY, 2015, 55 (3-4) : 520 - 526
  • [4] TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection
    Zunarelli, Laura
    Balestra, Luigi
    Reggiani, Susanna
    Sankaralingam, Raj
    Dissegna, Mariano
    Boselli, Gianluca
    2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS, 2023,
  • [5] Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications
    Zunarelli, L.
    Rotorato, S.
    Gnani, E.
    Reggiani, S.
    Sankaralingam, R.
    Dissegna, M.
    Boselli, G.
    MICROELECTRONICS RELIABILITY, 2025, 168
  • [6] An unassisted, low trigger-, and high holding-voltage SCR (uSCR) for on-chip ESD-protection applications
    Lou, Lifang
    Liou, Juin J.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) : 1120 - 1122
  • [7] Comparison Between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications
    Dai, Chia-Tsen
    Ker, Ming-Dou
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 798 - 802
  • [8] A New dual directional SCR with high holding voltage for High Voltage ESD protection
    Song, Shiyu
    Du, Feibo
    Hou, Fei
    Song, Wenqiang
    Liu, Zhiwei
    Liu, Jizhi
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [9] Design of Dual-Direction SCR With High Holding Voltage for High Voltage ESD Protection
    Liu, Yujie
    Jin, Xiangliang
    2022 INTERNATIONAL EOS/ESD SYMPOSIUM ON DESIGN AND SYSTEM (IEDS), 2022,
  • [10] High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage
    Lai, Da-Wei
    de Raad, Gijs
    Sque, Stephen
    Peters, Wim
    Smedes, Theo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (07) : 2884 - 2891
12345