Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn

被引：88
作者：
Zhang, Jungang
Xia, Changtai [1 ]
Deng, Qun
Xu, Wusheng
Shi, Hongsheng
Wu, Feng
Xu, Jun
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
[3] GE China Res & Dev Ctr Co Ltd, Shanghai 201203, Peoples R China
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2006年 / 67卷 / 08期
基金：
中国国家自然科学基金;
关键词：
oxides; crystal growth; X-ray diffraction; optical properties;
D O I：
10.1016/j.jpcs.2006.02.018
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Tin oxide doped beta-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. beta-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing. (c) 2006 Elsevier Ltd. All rights reserved.
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页码：1656 / 1659
页数：4
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