Inverted ordering of acceptor bound exciton states in Si: The role of electron-hole correlation

被引：0

作者：

Ruan, WY

Chang, YC

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] S China Univ Technol, Dept Appl Phys, Guangzhou 510641, Peoples R China

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 24期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1103/PhysRevB.69.245206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present detailed calculation of the positive acceptor ion (A(+)) and acceptor bound exciton (A(0)X) in Si, taking into account the valence-band anisotropy, dynamic Jahn-Teller effect, and particle correlation. We show that the inverted splitting ordering of acceptor bound exciton states can be accounted for by electron-hole correlation, when the hole-hole Coulomb repulsion is compensated for by the dynamic Jahn-Teller effect.

引用

收藏

页码：245206 / 1

页数：7

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