Role of precursors in the formation of lead zirconate titanate thin films

被引：31

作者：

Kotova, N. M. ^{[1
]}

Vorotilov, K. A. ^{[1
]}

Seregin, D. S. ^{[1
]}

Sigov, A. S. ^{[1
]}

机构：

[1] Moscow State Tech Univ Radioenqineerinq Elect & A, Moscow 119454, Russia

来源：

INORGANIC MATERIALS | 2014年 / 50卷 / 06期

关键词：

PZT; CRYSTALLIZATION; MICROSTRUCTURE;

D O I：

10.1134/S0020168514060107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin ferroelectric Pb(Zr0.48Ti0.52)O-3 lead zirconate titanate films have been prepared on platinized silicon substrates via chemical solution deposition. The starting film-forming solutions were prepared by reacting lead acetate with Ti and Zr alkoxides in 2-methoxyethanol. The electrical properties of the films were shown to depend on the Ti and Zr alkoxide precursors used in synthesis. The nature of the zirconium alkoxide had the strongest effect on the properties of the films. The best properties were obtained with zirconium n-propoxide.

引用

页码：612 / 616

页数：5

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