Reliability Aspects of High Voltage 4H-SiC JBS Diodes

被引：4

作者：

Brosselard, Pierre ^{[1
]}

Camara, Nicolas ^{[1
]}

Jorda, Xavier ^{[1
]}

Vellvehi, Miquel ^{[1
]}

Bano, Edwige ^{[2
]}

Millan, Jose ^{[1
]}

Godignon, Philippe ^{[1
]}

机构：

[1] CSIC, CNM, IMB, Campus UAB, ES-08193 Barcelona, Spain

[2] IMEP, ENSERG, BP 257, F-38016 Grenoble 1, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

4H-Silicon Carbide; Junction Barrier Schottky diode; Stacking Faults formation; Basal Plane Dislocation;

D O I：

10.4028/www.scientific.net/MSF.600-603.935

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

1.2 kV and 3.5 kV JBS diodes have been fabricated using the same technology process. After 50 hours of DC stress, 1.2 kV diodes do not exhibit any degradation in forward mode whereas the 3.5 kV JBS diodes show a degradation after ten hours. This behaviour has been confirmed by the formation of Stacking Faults clearly illustrated by electroluminescence microscopy in 3.5 kV JBS diodes, whereas it is not the case for the 1.2 kV JBS diodes.

引用

页码：935 / +

页数：2

共 5 条

[1] High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
Brosselard, P.
Jorda, X.
Vellvehi, M.
Godignon, P.
Millan, J.
Bergman, J. P.
Lambert, B.
[J]. PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 2007, : 285 - +
[2] BROSSELARD P, 2007, EUR POW EL C AALB DK
[3] CAMARA N, 2005, PHYS STATUS SOLIDI A, V202
[4] Unipolar SiC power devices and elevated temperature
Friedrichs, P
Stephani, D
[J]. MICROELECTRONIC ENGINEERING, 2006, 83 (01) : 181 - 184
[5] RUPP R, 2006, INT S POW SEM DEV IC

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