Polyaniline/carbon nanotube composite Schottky contacts

被引:21
作者
Ramamurthy, PC
Harrell, WR [1 ]
Gregory, RV
Sadanadan, B
Rao, AM
机构
[1] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson, SC 29634 USA
[2] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[3] Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29634 USA
关键词
D O I
10.1002/pen.20002
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Schottky contacts were fabricated on composites of high molecular weight polyaniline and pristine multiwalled carbon nanotubes. Physical and electrical characteristics of these organic composite materials were studied by using atomic force microscopy (AFM), scanning electron microscopy (SEM), and electrical measurements. The RMS surface roughness of the composite films was found to be 4 nm. From the IV characteristics of these composite devices, it appears that the current follows Ohm's law at lower voltages and Child's law at higher voltages, indicating a space-charge-limited emission mechanism in the presence of a distribution of shallow traps.
引用
收藏
页码:28 / 33
页数:6
相关论文
共 31 条
[1]   Continuous production of aligned carbon nanotubes: a step closer to commercial realization [J].
Andrews, R ;
Jacques, D ;
Rao, AM ;
Derbyshire, F ;
Qian, D ;
Fan, X ;
Dickey, EC ;
Chen, J .
CHEMICAL PHYSICS LETTERS, 1999, 303 (5-6) :467-474
[2]   Effect of selected processing parameters on solution properties and morphology of polyaniline and impact on conductivity [J].
Angelopoulos, M ;
Dipietro, R ;
Zheng, WG ;
MacDiarmid, AG ;
Epstein, AJ .
SYNTHETIC METALS, 1997, 84 (1-3) :35-39
[3]  
[Anonymous], PHYS SEMICONDUCTOR D
[4]   EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J].
ASHOK, S ;
LESTER, A ;
FONASH, SJ .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :200-202
[5]   Measurements and modelling of the barrier heights and ideality factors in the metal/conducting polymer composite Schottky device [J].
Bandyopadhyay, S ;
Bhattacharyya, A ;
Sen, SK .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) :3671-3676
[6]   Pressure dependence of the resistance in polyaniline and its derivatives at room temperature [J].
Bao, ZX ;
Liu, CX ;
Kahol, PK ;
Pinto, NJ .
SYNTHETIC METALS, 1999, 106 (02) :107-110
[7]   Controlled polymerization of aniline at sub-zero temperatures [J].
Beadle, PM ;
Nicolau, YF ;
Banka, E ;
Rannou, P ;
Djurado, D .
SYNTHETIC METALS, 1998, 95 (01) :29-45
[8]   POLYANILINE SCHOTTKY-BARRIER - EFFECT OF DOPING ON RECTIFICATION AND PHOTOVOLTAIC CHARACTERISTICS [J].
CHEN, SA ;
FANG, Y .
SYNTHETIC METALS, 1993, 60 (03) :215-222
[9]  
CHEN SA, 1993, SYNTHETIC MET, V55, P4082
[10]   Synthesis of a new polyaniline/nanotube composite:: "in-situ" polymerisation and charge transfer through site-selective interaction [J].
Cochet, M ;
Maser, WK ;
Benito, AM ;
Callejas, MA ;
Martínez, MT ;
Benoit, JM ;
Schreiber, J ;
Chauvet, O .
CHEMICAL COMMUNICATIONS, 2001, (16) :1450-1451