Time-Resolved Formation of Excitons and Electron-Hole Droplets in Si Studied Using Terahertz Spectroscopy

被引：80

作者：

Suzuki, Takeshi ^{[1
]}

Shimano, Ryo ^{[1
]}

机构：

[1] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 05期

关键词：

PLASMA MOTT TRANSITION; TEMPERATURE-DEPENDENCE; SILICON; SEMICONDUCTORS; DROPS; IONIZATION; GAS;

D O I：

10.1103/PhysRevLett.103.057401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated the formation dynamics of excitons and electron-hole (e-h) droplets (EHDs) in Si by using broadband terahertz time-domain spectroscopy. The formation of indirect excitons in Si was studied by observing their 1S-2P transition. Changes in surface plasmon resonance of the EHDs showed a gradual condensation from homogeneous e-h plasma at e-h densities above the exciton-Mott transition. Excitonic correlations were shown to exist prior to EHD condensation even above the Mott density.

引用

页数：4

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