Time-Resolved Formation of Excitons and Electron-Hole Droplets in Si Studied Using Terahertz Spectroscopy

被引：82
作者：
Suzuki, Takeshi [1 ]
Shimano, Ryo [1 ]
机构：
[1] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan
来源：
PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 05期
关键词：
PLASMA MOTT TRANSITION; TEMPERATURE-DEPENDENCE; SILICON; SEMICONDUCTORS; DROPS; IONIZATION; GAS;
D O I：
10.1103/PhysRevLett.103.057401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigated the formation dynamics of excitons and electron-hole (e-h) droplets (EHDs) in Si by using broadband terahertz time-domain spectroscopy. The formation of indirect excitons in Si was studied by observing their 1S-2P transition. Changes in surface plasmon resonance of the EHDs showed a gradual condensation from homogeneous e-h plasma at e-h densities above the exciton-Mott transition. Excitonic correlations were shown to exist prior to EHD condensation even above the Mott density.
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