Crystallization and grain growth behavior of CoFeB and MgO layers in multilayer magnetic tunnel junctions

The relationship between crystallization, grain growth behavior, and the diffusion of B out of CoFeB has been investigated in annealed film stacks of sputtered CoFeB vertical bar MgO using a combination of two dimensional x-ray diffraction, transmission electron microscopy, and parallel electron energy loss spectroscopy (PEELS). The analysis shows grain growth in MgO layers. It shows crystallization at approximately 350 degrees C, and subsequent grain growth in CoFeB layers with annealing. The orientations of the grains of MgO and CoFe are definitively shown to be (002) in the out-of-plane direction. The MgO lattice is seen to have an in-plane tensile stress, while CoFe lattice is shown to have an in-plane compressive stress. CoFe grains are observed to be smaller than MgO grains, rather than being of equal size as previously understood. The physical process of B diffusion into MgO has also been investigated using PEELS and is determined that the diffusion of B through MgO is mediated through vacancies and defect states by the formation of BO(x) complexes.