High-resistant thick silicon epitaxial layers

被引：0

作者：

Ivancheva, W ^{[1
]}

Rahnev, P ^{[1
]}

Letskovska, S ^{[1
]}

Seymenliyski, K ^{[1
]}

Tzanev, T ^{[1
]}

机构：

[1] Tech Univ Sofia, Dept Sliven, Burgas 8000, Bulgaria

来源：

2001 MICROWAVE ELECTRONICS: MEASUREMENTS, IDENTIFICATION, APPLICATION, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/MEMIA.2001.982341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development and introduction of powerful high-voltage diods and transistors, p-I-n diods, photodiods, avalanche diods and other devices require Silicon epitaxial layers with high resistance and great thickness, smooth surface and considerable extent of crystallographic perfection, i.e. a minimal number of structural defects. The CVD (chloral vapour deposition) technology appears to be the most suitable one for obtaining such layers.

引用

页码：156 / 158

页数：3

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