High-resistant thick silicon epitaxial layers

被引：0
|
作者：
Ivancheva, W [1 ]
Rahnev, P [1 ]
Letskovska, S [1 ]
Seymenliyski, K [1 ]
Tzanev, T [1 ]
机构：
[1] Tech Univ Sofia, Dept Sliven, Burgas 8000, Bulgaria
来源：
2001 MICROWAVE ELECTRONICS: MEASUREMENTS, IDENTIFICATION, APPLICATION, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/MEMIA.2001.982341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development and introduction of powerful high-voltage diods and transistors, p-I-n diods, photodiods, avalanche diods and other devices require Silicon epitaxial layers with high resistance and great thickness, smooth surface and considerable extent of crystallographic perfection, i.e. a minimal number of structural defects. The CVD (chloral vapour deposition) technology appears to be the most suitable one for obtaining such layers.
引用
收藏
页码：156 / 158
页数：3
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