Density functional theory study on the reducing agents for atomic layer deposition of tungsten using tungsten chloride precursor

被引:14
作者
Hidayat, Romel [1 ]
Chowdhury, Tanzia [1 ]
Kim, Yewon [1 ]
Kim, Seongyoon [1 ]
Mayangsari, Tirta Rona [2 ]
Kim, Soo-Hyun [3 ]
Lee, Won-Jun [1 ]
机构
[1] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
[2] Univ Pertamina, Dept Chem, Jakarta 12220, Indonesia
[3] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 038541, South Korea
关键词
Atomic layer deposition; Tungsten; Reducing agent; Density functional theory; Tungsten chloride; SILICON CHLORIDES; SURFACE-REACTION; CVD-W; FILMS; OXIDE; PSEUDOPOTENTIALS; MECHANISM; FLUORINE; GROWTH; ALD;
D O I
10.1016/j.apsusc.2020.148156
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We studied co-reactants for tungsten chloride precursors by density functional theory calculation to find the proper reducing agent. Tungsten chlorides, WCl6 and WCl5, are gaining attention for the fluorine-free atomic layer deposition (ALD) of tungsten. We created a W4Cl12 cluster by optimizing the number of tungsten and chlorine atoms in the chlorine-passivated tungsten cluster. We predicted the growth of tungsten carbide by the reaction of trimethylaluminum with the cluster, confirming that the cluster can mimic the chlorine-passivated tungsten surface. Then we simulated the reaction between the W4Cl12 cluster and four co-reactants. Possible reaction pathways between the cluster and the co-reactants were simulated to compare the reaction energies and activation energies. All co-reactants of the present work, atomic hydrogen, H-2, SiH4, and B2H6, would act as reducing agents with the reaction energies of -2.07 eV, -0.01 eV, -0.28 eV, and -0.45 eV, respectively. The reducing power was in the order of atomic hydrogen, B2H6, SiH4, and H-2 with activation energies of +0.04 eV, +0.18 eV, +1.18 eV, and +2.32 eV, respectively. B2H6 is the most promising gas-phase candidate due to its low activation energy for reduction and high activation energy for boron incorporation.
引用
收藏
页数:9
相关论文
共 53 条
[1]  
[Anonymous], 1999, TUNGSTEN, DOI DOI 10.1007/978-1-4615-4907-9
[2]  
[Anonymous], 2016, ENTEGRIS LAUNCH FLUO
[3]  
Bakke J, 2016, IEEE INT INTERC TECH, P108, DOI 10.1109/IITC-AMC.2016.7507699
[4]   AB-INITIO ENERGY-ADJUSTED PSEUDOPOTENTIALS FOR ELEMENTS OF GROUPS 13-17 [J].
BERGNER, A ;
DOLG, M ;
KUCHLE, W ;
STOLL, H ;
PREUSS, H .
MOLECULAR PHYSICS, 1993, 80 (06) :1431-1441
[5]   Atomic Layer Deposition of Tungsten-Rich Tungsten Carbide Films Using WCl6 and AlH2(tBuNCH2CH2NMe2) as Precursors [J].
Blakeney, Kyle J. ;
Ward, Cassandra L. ;
Winter, Charles H. .
ATOMIC LAYER DEPOSITION APPLICATIONS 14, 2018, 86 (06) :41-51
[6]   Thermal atomic layer deposition of tungsten carbide films from WCl6 and AlMe3 [J].
Blakeney, Kyle J. ;
Winter, Charles H. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (01)
[7]   Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules [J].
Chowdhury, Tanzia ;
Hidayat, Romel ;
Mayangsari, Tirta Rona ;
Gu, Jiyeon ;
Kim, Hye-Lee ;
Jung, Jongwan ;
Lee, Won-Jun .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2019, 37 (02)
[8]   AN ALL-ELECTRON NUMERICAL-METHOD FOR SOLVING THE LOCAL DENSITY FUNCTIONAL FOR POLYATOMIC-MOLECULES [J].
DELLEY, B .
JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (01) :508-517
[9]   From molecules to solids with the DMol3 approach [J].
Delley, B .
JOURNAL OF CHEMICAL PHYSICS, 2000, 113 (18) :7756-7764
[10]   ENERGY-ADJUSTED ABINITIO PSEUDOPOTENTIALS FOR THE 1ST-ROW TRANSITION-ELEMENTS [J].
DOLG, M ;
WEDIG, U ;
STOLL, H ;
PREUSS, H .
JOURNAL OF CHEMICAL PHYSICS, 1987, 86 (02) :866-872