Induced anisotropy in soft magnetic Fe65Co35/Co thin films
被引:26
作者:
Fu, Y.
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机构:
Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R ChinaLanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
Fu, Y.
[1
]
Yang, Z.
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机构:Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
Yang, Z.
Miyao, T.
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机构:Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
Miyao, T.
Matsumoto, M.
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机构:Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
Matsumoto, M.
Liu, Xx
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机构:Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
Liu, Xx
Morisako, A.
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机构:Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
Morisako, A.
机构:
[1] Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
[2] Shinshu Univ, Dept Informat Engn, Nagano 3808553, Japan
来源:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
|
2006年
/
133卷
/
1-3期
关键词:
FeCo sputtering film;
magnetic anisotropy;
soft magnetic properties;
D O I:
10.1016/j.mseb.2006.05.002
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Two methods to control the magnetic anisotropy were developed in magnetically soft FeCo (=Fe65Co35) sputtered films with a thin Co underlayer. One method was to deposit the FeCo/Co films by varying the substrate-target spacing d(T-S). It changed the energy and incident angle of Fe(Co) atoms arriving at the substrate and influenced the film growth and microstructure. The magnetic anisotropy three times larger than that of film deposited at normal d(T-S) was observed. The other method was to deposit the films on a series of prestressed glass substrates. An anisotropic stress with different amplitudes was systematically introduced into the films when the prestressed substrate was released. It was found that the magnetic anisotropy was strongly affected by the amplitude and direction of applied stress. An H-k of 250 Oe (=19.9 kA/m) was induced in the film without deteriorating the soft magnetic properties. (c) 2006 Elsevier B.V. All rights reserved.