Synthesis and field emission studies of tower-like GaN nanowires

被引:5
|
作者
Liu, Yihe
Meng, Xianquan [1 ]
Wan, Xiang
Wang, Zelong
Huang, Huihui
Long, Hao
Song, Zengcai
Fang, Guojia
机构
[1] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Hubei, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2014年 / 9卷
基金
中国国家自然科学基金;
关键词
Tower-like nanowires; Chemical vapor deposition; TEM; Field emission; GROWTH-MECHANISM; NANOSTRUCTURES; SURFACE; ARRAYS; BLUE; VLS;
D O I
10.1186/1556-276X-9-607
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are (10 (1) over bar1) and (10 (1) over bar(1) over bar) facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/mu m which is lower than those of other GaN one-dimensional (1D) nanomaterials.
引用
收藏
页数:6
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