Extended dynamic model for ion diffusion in all-vanadium redox flow battery including the effects of temperature and bulk electrolyte transfer

被引:84
|
作者
Badrinarayanan, Rajagopalan [1 ]
Zhao, Jiyun [1 ]
Tseng, K. J. [1 ]
Skyllas-Kazacos, Maria [2 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, EXQUISITUS, Ctr E City, Singapore 639798, Singapore
[2] Univ New S Wales, Sch Chem Engn, Sydney, NSW 2052, Australia
基金
新加坡国家研究基金会;
关键词
Energy storage; Vanadium redox flow battery; Capacity loss model; Temperature dependence; Bulk electrolyte transfer; Battery efficiency; EXCHANGE MEMBRANES; CAPACITY LOSS; TRANSPORT; PERFORMANCE; BEHAVIOR; SYSTEM;
D O I
10.1016/j.jpowsour.2014.07.128
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As with all redox flow batteries, the Vanadium Redox flow Battery (VRB) can suffer from capacity loss as the vanadium ions diffuse at different rates leading to a build-up on one half-cell and dilution on the other. In this paper an extended dynamic model of the vanadium ion transfer is developed including the effect of temperature and bulk electrolyte transfer. The model is used to simulate capacity decay for a range of different ion exchange membranes that are being used in the VRB. The simulations show that Selemion CMV and Nafion 115 membranes have similar behavior where the impact of temperature on capacity loss is highest within the first 100 cycles. The results for Selemion AMV membrane however are seen to be very different where the capacity loss at different temperatures observed to increase linearly with increasing charging/discharging cycles. The model is made more comprehensive by including the effect of bulk electrolyte transfer. A volume change of 19% is observed in each half-cell for Nafion 115 membrane based on the simulation parameters. The effect of this change in volume directly affects concentration, and the characteristics are analyzed for each vanadium species as well as the overall concentration in the half-cells. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:576 / 586
页数:11
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