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Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices
被引:4
|作者:
Li, Xuefei
[1
,2
]
Xiong, Xiong
[1
,3
]
Wu, Yanqing
[1
,2
,3
]
机构:
[1] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Elect & Elect Engn, Wuhan 430074, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
基金:
中国国家自然科学基金;
关键词:
black phosphorus;
transistors;
mobility;
photodetector;
FIELD-EFFECT TRANSISTORS;
TRANSPORT-PROPERTIES;
2D SEMICONDUCTOR;
GRAPHENE;
PHOTODETECTORS;
PASSIVATION;
CIRCUITS;
HETEROSTRUCTURE;
PHOTOOXIDATION;
GENERATION;
D O I:
10.1088/1674-1056/26/3/037307
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for electronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stability, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.
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页数:11
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